Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Han-Chun Wu, Alexander N Chaika, Ming Chien Hsu, Tsung-Wei Huang, Mourad Abid, Mohamed Abid, Victor Yu Aristov, Olga V Molodtsova, Sergey V Babenkov, Yuran Niu, Barry E Murphy, Sergey A Krasnikov, Olaf Lübben, Huajun Liu, Byong Sun Chun, Yahya T Janabi, Sergei N Molotkov, Igor V. Shvets, Alexander I. Lichtenstein, Mikhail I. KatsnelsonChing-Ray Chang

Research output: Contribution to journalArticlepeer-review

Abstract

Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

Original languageEnglish
Article number14453
JournalNature Communications
Volume8
DOIs
Publication statusPublished - 2017 Feb 15

Subject classification (UKÄ)

  • Physical Sciences

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