Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC

M Wagner, NQ Thinh, NT Son, WM Chen, E Janzen, PG Baranov, EN Mokhov, C Hallin, Lennart Lindström

Research output: Contribution to journalArticlepeer-review

Abstract

The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.
Original languageEnglish
Article number155214
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume66
Issue number15
DOIs
Publication statusPublished - 2002

Subject classification (UKÄ)

  • Condensed Matter Physics

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