Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors

J. Makela, M. Tuominen, M. Kuzmin, M. Yasir, J. Lang, M. P. J. Punkkinen, P. Laukkanen, K. Kokko, Karina Schulte, Jacek Osiecki, R. M. Wallace

Research output: Contribution to journalArticlepeer-review

Abstract

The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d(5/2) peaks of pure III-V's originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d(5/2) components with the symmetric peak shape and dominant Lorentzian broadening. (C) 2015 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)371-375
JournalApplied Surface Science
Volume329
DOIs
Publication statusPublished - 2015

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences

Free keywords

  • Line shape
  • III-V semiconductor
  • Photoelectron spectroscopy
  • Interfacial
  • analysis

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