Liquid-target laser-plasma source for X-ray lithography

L Malmqvist; A. L Bogdanov; Lars Montelius; H. M Hertz

doi:10.1016/S0167-9317(97)87391-1

Liquid-target laser-plasma source for X-ray lithography

L Malmqvist, A. L Bogdanov, Lars Montelius, H. M Hertz

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We describe a compact and practically debris-free laser-plasma x-ray source suitable for proximity lithography. The source is based on a microscopic fluorocarbon continuous liquid jet droplet target, generating high-brightness lambda=1.2-1.7 nm x-ray emission with similar to 5% conversion efficiency. This target type has the advantages of producing only negligible amounts of debris, and being regenerative, thereby allowing high-repetition-rate uninterrupted operation. The source is combined with an Au/SiNx x-ray mask to demonstrate lithography of sub-100 nm structures in SAL-601 chemically enhanced resist.

Original language	English
Pages (from-to)	535-536
Journal	Microelectronic Engineering
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(97)87391-1
Publication status	Published - 1997

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Atomic physics (011013005), Physics, Faculty of Technology (011013200)

Subject classification (UKÄ)

Atom and Molecular Physics and Optics

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10.1016/S0167-9317(97)87391-1

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title = "Liquid-target laser-plasma source for X-ray lithography",

abstract = "We describe a compact and practically debris-free laser-plasma x-ray source suitable for proximity lithography. The source is based on a microscopic fluorocarbon continuous liquid jet droplet target, generating high-brightness lambda=1.2-1.7 nm x-ray emission with similar to 5\% conversion efficiency. This target type has the advantages of producing only negligible amounts of debris, and being regenerative, thereby allowing high-repetition-rate uninterrupted operation. The source is combined with an Au/SiNx x-ray mask to demonstrate lithography of sub-100 nm structures in SAL-601 chemically enhanced resist.",

author = "L Malmqvist and Bogdanov, \{A. L\} and Lars Montelius and Hertz, \{H. M\}",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Atomic physics (011013005), Physics, Faculty of Technology (011013200)",

year = "1997",

doi = "10.1016/S0167-9317(97)87391-1",

language = "English",

volume = "35",

pages = "535--536",

journal = "Microelectronic Engineering",

issn = "1873-5568",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Liquid-target laser-plasma source for X-ray lithography

AU - Malmqvist, L

AU - Bogdanov, A. L

AU - Montelius, Lars

AU - Hertz, H. M

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Atomic physics (011013005), Physics, Faculty of Technology (011013200)

PY - 1997

Y1 - 1997

N2 - We describe a compact and practically debris-free laser-plasma x-ray source suitable for proximity lithography. The source is based on a microscopic fluorocarbon continuous liquid jet droplet target, generating high-brightness lambda=1.2-1.7 nm x-ray emission with similar to 5% conversion efficiency. This target type has the advantages of producing only negligible amounts of debris, and being regenerative, thereby allowing high-repetition-rate uninterrupted operation. The source is combined with an Au/SiNx x-ray mask to demonstrate lithography of sub-100 nm structures in SAL-601 chemically enhanced resist.

AB - We describe a compact and practically debris-free laser-plasma x-ray source suitable for proximity lithography. The source is based on a microscopic fluorocarbon continuous liquid jet droplet target, generating high-brightness lambda=1.2-1.7 nm x-ray emission with similar to 5% conversion efficiency. This target type has the advantages of producing only negligible amounts of debris, and being regenerative, thereby allowing high-repetition-rate uninterrupted operation. The source is combined with an Au/SiNx x-ray mask to demonstrate lithography of sub-100 nm structures in SAL-601 chemically enhanced resist.

UR - https://www.scopus.com/pages/publications/0031073867

U2 - 10.1016/S0167-9317(97)87391-1

DO - 10.1016/S0167-9317(97)87391-1

M3 - Article

SN - 1873-5568

VL - 35

SP - 535

EP - 536

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Liquid-target laser-plasma source for X-ray lithography

Abstract

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