Localization Effects in Non-Homogeneous Dielectrics

Pavel Kurasov, Boris Pavlov

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

It is well known that dielectrics with the reconstruction of zone structure (Pb1-xSnxTe, for example) have two-dimensional layers with a specific electron properties. A corresponding relativistic model has been discussed, in particular, by B.A. Volkov and O.A. Pankratov (1985). The general nature of the effect under consideration can be demonstrated by in a simple model setting, and the aim here is to construct such an exactly solvable model. The authors regard a two-dimensional solid as an infinite number of one-dimensional layers
Original languageEnglish
Title of host publicationOrder, Disorder and Chaos in Quantum Systems. Proceedings of a Conference
PublisherBirkhäuser Verlag
Pages307-313
Volume46
ISBN (Print)3 7643 2492 9
Publication statusPublished - 1990
EventOrder, Disorder and Chaos in Quantum Systems. Proceedings of a Conference - Dubna, USSR
Duration: 1989 Oct 171989 Oct 21

Publication series

Name
Volume46

Conference

ConferenceOrder, Disorder and Chaos in Quantum Systems. Proceedings of a Conference
Period1989/10/171989/10/21

Subject classification (UKÄ)

  • Mathematics

Free keywords

  • band structure of crystalline semiconductors and insulators
  • dielectric materials
  • localised electron states

Fingerprint

Dive into the research topics of 'Localization Effects in Non-Homogeneous Dielectrics'. Together they form a unique fingerprint.

Cite this