Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

Markus Hellenbrand; Elvedin Memisevic; Martin Berg; Olli-Pekka Kilpi; Johannes Svensson; Lars-Erik Wernersson

doi:10.1109/LED.2017.2757538

Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

Markus Hellenbrand, Elvedin Memisevic, Martin Berg, Olli-Pekka Kilpi, Johannes Svensson, Lars-Erik Wernersson

Research output: Contribution to journal › Letter › peer-review

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Abstract

We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel fieldeffect transistors (TFETs), which helps to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junction without deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/decade for a constant LFN level.

Original language	English
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2017.2757538
Publication status	Published - 2017 Sept 28

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

Vertical Nanowires
III-V
MOSFET
TFET
Low-Frequency Noise

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10.1109/LED.2017.2757538

LFN_MOSFETs_TFETs_final_MHE_LU_uploadAccepted author manuscript, 341 KB

1 Doctoral Thesis (compilation)

Electrical Characterisation of III-V Nanowire MOSFETs
Hellenbrand, M., 2020 May, Lund: Department of Electrical and Information Technology, Lund University. 156 p.
Research output: Thesis › Doctoral Thesis (compilation)

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title = "Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs",

abstract = "We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel fieldeffect transistors (TFETs), which helps to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junction without deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/decade for a constant LFN level.",

keywords = "Vertical Nanowires, III-V, MOSFET, TFET, Low-Frequency Noise",

author = "Markus Hellenbrand and Elvedin Memisevic and Martin Berg and Olli-Pekka Kilpi and Johannes Svensson and Lars-Erik Wernersson",

year = "2017",

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doi = "10.1109/LED.2017.2757538",

language = "English",

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T1 - Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

AU - Hellenbrand, Markus

AU - Memisevic, Elvedin

AU - Berg, Martin

AU - Kilpi, Olli-Pekka

AU - Svensson, Johannes

AU - Wernersson, Lars-Erik

PY - 2017/9/28

Y1 - 2017/9/28

N2 - We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel fieldeffect transistors (TFETs), which helps to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junction without deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/decade for a constant LFN level.

AB - We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel fieldeffect transistors (TFETs), which helps to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junction without deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/decade for a constant LFN level.

KW - Vertical Nanowires

KW - III-V

KW - MOSFET

KW - TFET

KW - Low-Frequency Noise

U2 - 10.1109/LED.2017.2757538

DO - 10.1109/LED.2017.2757538

M3 - Letter

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

Abstract

Subject classification (UKÄ)

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Research output

Electrical Characterisation of III-V Nanowire MOSFETs

Cite this