Abstract
Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( LG ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, αH ~ 5×10-6 and also have a low input-referred gate voltage noise spectral density, SVG=4.3μV2μm2 Hz -1 that are important for reliable cryogenic circuit applications.
Original language | English |
---|---|
Pages (from-to) | 2033 |
Number of pages | 2036 |
Journal | IEEE Electron Device Letters |
Volume | 43 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2022 Oct 19 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- MOSFET
- Noise measurement
- Fluctuations
- Temperature
- Cryogenics
- Indium gallium arsenide
- Logic gates