Abstract
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
Original language | English |
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Pages (from-to) | 182-187 |
Journal | Nano Letters |
Volume | 16 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2016 |
Subject classification (UKÄ)
- Nano Technology