Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Michael D Thompson; Aiyeshah Alhodaib; Adam P Craig; Alex Robson; Atif Aziz; Anthony Krier; Johannes Svensson; Lars-Erik Wernersson; Ana M Sanchez; Andrew R J Marshall

doi:10.1021/acs.nanolett.5b03449

Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Michael D Thompson, Aiyeshah Alhodaib, Adam P Craig, Alex Robson, Atif Aziz, Anthony Krier, Johannes Svensson, Lars-Erik Wernersson, Ana M Sanchez, Andrew R J Marshall

Department of Electrical and Information Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

Original language	English
Pages (from-to)	182-187
Journal	Nano Letters
Volume	16
Issue number	1
DOIs	https://doi.org/10.1021/acs.nanolett.5b03449
Publication status	Published - 2016

Subject classification (UKÄ)

Nano-technology

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10.1021/acs.nanolett.5b03449

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title = "Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.",

abstract = "Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20\% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.",

author = "Thompson, \{Michael D\} and Aiyeshah Alhodaib and Craig, \{Adam P\} and Alex Robson and Atif Aziz and Anthony Krier and Johannes Svensson and Lars-Erik Wernersson and Sanchez, \{Ana M\} and Marshall, \{Andrew R J\}",

year = "2016",

doi = "10.1021/acs.nanolett.5b03449",

language = "English",

volume = "16",

pages = "182--187",

journal = "Nano Letters",

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T1 - Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

AU - Thompson, Michael D

AU - Alhodaib, Aiyeshah

AU - Craig, Adam P

AU - Robson, Alex

AU - Aziz, Atif

AU - Krier, Anthony

AU - Svensson, Johannes

AU - Wernersson, Lars-Erik

AU - Sanchez, Ana M

AU - Marshall, Andrew R J

PY - 2016

Y1 - 2016

N2 - Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

AB - Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

UR - https://www.scopus.com/pages/publications/84957605277

U2 - 10.1021/acs.nanolett.5b03449

DO - 10.1021/acs.nanolett.5b03449

M3 - Article

C2 - 26675242

SN - 1530-6992

VL - 16

SP - 182

EP - 187

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -

Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Abstract

Subject classification (UKÄ)

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