Recent work showing a strong quality improvement of the Si/SiO2 material system by low temperature atomic hydrogen annealing (AHA), and the fact that III-V semiconductors outperform Si in many applications makes the investigation of AHA on III-V/high-k interfaces to a very interesting topic. In this work, the potential of AHA as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and reliability. The device performance is comparable to RTP annealing but can be performed at a lower temperature, which opens up for integration of more temperature-sensitive materials in the device stack.

Original languageEnglish
Article number055001
Number of pages8
JournalSemiconductor Science and Technology
Issue number5
Publication statusPublished - 2023 May

Subject classification (UKÄ)

  • Nano Technology
  • Atom and Molecular Physics and Optics

Free keywords

  • atomic hydrogen annealing
  • effective mobility
  • InGaAs
  • reliability
  • subthreshold swing


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