Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

K. Levchenko; T. Andrearczyk; J. Z. Domagala; T. Wosinski; T. Figielski; Janusz Sadowski

Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T. Figielski, Janusz Sadowski

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

3 Citations (SciVal)

Abstract

High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.

Original language	English
Pages (from-to)	1121-1124
Journal	Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
Volume	126
Issue number	5
Publication status	Published - 2014

Subject classification (UKÄ)

Natural Sciences
Physical Sciences

Cite this

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title = "Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers",

abstract = "High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.",

author = "K. Levchenko and T. Andrearczyk and Domagala, {J. Z.} and T. Wosinski and T. Figielski and Janusz Sadowski",

year = "2014",

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volume = "126",

pages = "1121--1124",

journal = "Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics",

issn = "0587-4246",

publisher = "Institute of Physics, Polish Academy of Sciences",

number = "5",

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Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers. / Levchenko, K.; Andrearczyk, T.; Domagala, J. Z. et al.

In: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, Vol. 126, No. 5, 2014, p. 1121-1124.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

AU - Levchenko, K.

AU - Andrearczyk, T.

AU - Domagala, J. Z.

AU - Wosinski, T.

AU - Figielski, T.

AU - Sadowski, Janusz

PY - 2014

Y1 - 2014

N2 - High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.

AB - High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.

M3 - Article

VL - 126

SP - 1121

EP - 1124

JO - Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics

JF - Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics

SN - 0587-4246

IS - 5

ER -

Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

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Subject classification (UKÄ)

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