Abstract
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.
Original language | English |
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Pages (from-to) | 1121-1124 |
Journal | Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics |
Volume | 126 |
Issue number | 5 |
Publication status | Published - 2014 |
Subject classification (UKÄ)
- Natural Sciences
- Physical Sciences