Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T. Figielski, Janusz Sadowski

Research output: Contribution to journalArticlepeer-review


High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.
Original languageEnglish
Pages (from-to)1121-1124
JournalActa Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
Issue number5
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences


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