Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

S Roy, A Salomonsson, A Lloyd Spetz, C Aulin, PO Kall, L Ojamae, M Strand, Mehri Sanati

Research output: Contribution to journalArticlepeer-review

Abstract

Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.
Original languageEnglish
Pages (from-to)275-278
JournalMaterials and Manufacturing Processes
Volume21
Issue number3
DOIs
Publication statusPublished - 2006

Subject classification (UKÄ)

  • Production Engineering, Human Work Science and Ergonomics

Free keywords

  • accumulation region
  • adsorption
  • capacitance voltage (C-V)
  • depletion region
  • field-effect
  • gas sensors
  • gate material
  • high frequency
  • high temperature
  • interface
  • metal-insulator-seimconductor (MISIC)
  • nano particles
  • ruthenium oxide
  • silicon carbide
  • transient response

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