Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

S Roy; A Salomonsson; A Lloyd Spetz; C Aulin; PO Kall; L Ojamae; M Strand; Mehri Sanati

doi:10.1080/10426910500464651

Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

S Roy, A Salomonsson, A Lloyd Spetz, C Aulin, PO Kall, L Ojamae, M Strand, Mehri Sanati

Ergonomics and Aerosol Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.

Original language	English
Pages (from-to)	275-278
Journal	Materials and Manufacturing Processes
Volume	21
Issue number	3
DOIs	https://doi.org/10.1080/10426910500464651
Publication status	Published - 2006

Subject classification (UKÄ)

Production Engineering, Human Work Science and Ergonomics

Free keywords

accumulation region
adsorption
capacitance voltage (C-V)
depletion region
field-effect
gas sensors
gate material
high frequency
high temperature
interface
metal-insulator-seimconductor (MISIC)
nano particles
ruthenium oxide
silicon carbide
transient response

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10.1080/10426910500464651

Cite this

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title = "Metal oxide nanoparticles as novel gate materials for field-effect gas sensors",

abstract = "Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.",

keywords = "accumulation region, adsorption, capacitance voltage (C-V), depletion region, field-effect, gas sensors, gate material, high frequency, high temperature, interface, metal-insulator-seimconductor (MISIC), nano particles, ruthenium oxide, silicon carbide, transient response",

author = "S Roy and A Salomonsson and {Lloyd Spetz}, A and C Aulin and PO Kall and L Ojamae and M Strand and Mehri Sanati",

year = "2006",

doi = "10.1080/10426910500464651",

language = "English",

volume = "21",

pages = "275--278",

journal = "Materials and Manufacturing Processes",

issn = "1042-6914",

publisher = "Taylor & Francis",

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TY - JOUR

T1 - Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

AU - Roy, S

AU - Salomonsson, A

AU - Lloyd Spetz, A

AU - Aulin, C

AU - Kall, PO

AU - Ojamae, L

AU - Strand, M

AU - Sanati, Mehri

PY - 2006

Y1 - 2006

N2 - Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.

AB - Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.

KW - accumulation region

KW - adsorption

KW - capacitance voltage (C-V)

KW - depletion region

KW - field-effect

KW - gas sensors

KW - gate material

KW - high frequency

KW - high temperature

KW - interface

KW - metal-insulator-seimconductor (MISIC)

KW - nano particles

KW - ruthenium oxide

KW - silicon carbide

KW - transient response

U2 - 10.1080/10426910500464651

DO - 10.1080/10426910500464651

M3 - Article

SN - 1042-6914

VL - 21

SP - 275

EP - 278

JO - Materials and Manufacturing Processes

JF - Materials and Manufacturing Processes

IS - 3

ER -

Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

Abstract

Subject classification (UKÄ)

Free keywords

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