Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Lars-Erik Wernersson, Magnus Borgström, Boel Gustafson, Anders Gustafsson, I Pietzonka, Mats-Erik Pistol, T Sass, Werner Seifert, Lars Samuelson

Research output: Contribution to journalArticlepeer-review

5 Citations (SciVal)

Abstract

We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.
Original languageEnglish
Pages (from-to)1841-1843
JournalApplied Physics Letters
Volume80
Issue number10
DOIs
Publication statusPublished - 2002

Subject classification (UKÄ)

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Fingerprint

Dive into the research topics of 'Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes'. Together they form a unique fingerprint.

Cite this