Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Lars-Erik Wernersson; Magnus Borgström; Boel Gustafson; Anders Gustafsson; I Pietzonka; Mats-Erik Pistol; T Sass; Werner Seifert; Lars Samuelson

doi:10.1063/1.1459113

Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Lars-Erik Wernersson, Magnus Borgström, Boel Gustafson, Anders Gustafsson, I Pietzonka, Mats-Erik Pistol, T Sass, Werner Seifert, Lars Samuelson

Research output: Contribution to journal › Article › peer-review

5 Citations (SciVal)

Abstract

We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.

Original language	English
Pages (from-to)	1841-1843
Journal	Applied Physics Letters
Volume	80
Issue number	10
DOIs	https://doi.org/10.1063/1.1459113
Publication status	Published - 2002

Subject classification (UKÄ)

Condensed Matter Physics
Electrical Engineering, Electronic Engineering, Information Engineering

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10.1063/1.1459113

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@article{5bc6e8af49e646da8e481a370f027ebe,

title = "Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes",

abstract = "We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.",

author = "Lars-Erik Wernersson and Magnus Borgstr{\"o}m and Boel Gustafson and Anders Gustafsson and I Pietzonka and Mats-Erik Pistol and T Sass and Werner Seifert and Lars Samuelson",

year = "2002",

doi = "10.1063/1.1459113",

language = "English",

volume = "80",

pages = "1841--1843",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "10",

}

Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes. / Wernersson, Lars-Erik ; Borgström, Magnus; Gustafson, Boel; Gustafsson, Anders; Pietzonka, I; Pistol, Mats-Erik; Sass, T; Seifert, Werner; Samuelson, Lars.

In: Applied Physics Letters, Vol. 80, No. 10, 2002, p. 1841-1843.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

AU - Wernersson, Lars-Erik

AU - Borgström, Magnus

AU - Gustafson, Boel

AU - Gustafsson, Anders

AU - Pietzonka, I

AU - Pistol, Mats-Erik

AU - Sass, T

AU - Seifert, Werner

AU - Samuelson, Lars

PY - 2002

Y1 - 2002

N2 - We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.

AB - We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.

U2 - 10.1063/1.1459113

DO - 10.1063/1.1459113

M3 - Article

VL - 80

SP - 1841

EP - 1843

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

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