Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

Rawa Tanta; Caroline Lindberg; Sebastian Lehmann; Jessica Bolinsson; Miguel R. Carro-Temboury; Kimberly A. Dick; Tom Vosch; Thomas Sand Jespersen; Jesper Nygård

doi:10.1103/PhysRevB.96.165433

Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

Rawa Tanta, Caroline Lindberg, Sebastian Lehmann, Jessica Bolinsson, Miguel R. Carro-Temboury, Kimberly A. Dick, Tom Vosch, Thomas Sand Jespersen, Jesper Nygård

University of Copenhagen

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.

Original language	English
Article number	165433
Journal	Physical Review B
Volume	96
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.96.165433
Publication status	Published - 2017 Oct 19

Subject classification (UKÄ)

Condensed Matter Physics

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10.1103/PhysRevB.96.165433

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden
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title = "Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires",

abstract = "We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.",

author = "Rawa Tanta and Caroline Lindberg and Sebastian Lehmann and Jessica Bolinsson and Carro-Temboury, {Miguel R.} and Dick, {Kimberly A.} and Tom Vosch and Jespersen, {Thomas Sand} and Jesper Nyg{\aa}rd",

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AU - Tanta, Rawa

AU - Lindberg, Caroline

AU - Lehmann, Sebastian

AU - Bolinsson, Jessica

AU - Carro-Temboury, Miguel R.

AU - Dick, Kimberly A.

AU - Vosch, Tom

AU - Jespersen, Thomas Sand

AU - Nygård, Jesper

PY - 2017/10/19

Y1 - 2017/10/19

N2 - We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.

AB - We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.

U2 - 10.1103/PhysRevB.96.165433

DO - 10.1103/PhysRevB.96.165433

M3 - Article

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SN - 2469-9950

VL - 96

JO - Physical Review B

JF - Physical Review B

IS - 16

M1 - 165433

ER -

Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

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National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden

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