Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

M. Adell, J. Adell, L. Ilver, J. Kanski, J. Sadowski, J. Z. Domagala

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Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.

Original languageEnglish
Article number054415
JournalPhysical Review B (Condensed Matter and Materials Physics)
Issue number5
Publication statusPublished - 2007 Feb 22
Externally publishedYes


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