Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

M. Adell; J. Adell; L. Ilver; J. Kanski; J. Sadowski; J. Z. Domagala

doi:10.1103/PhysRevB.75.054415

Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

M. Adell, J. Adell, L. Ilver, J. Kanski, J. Sadowski, J. Z. Domagala

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Abstract

Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.

Original language	English
Article number	054415
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	75
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.75.054415
Publication status	Published - 2007 Feb 22
Externally published	Yes

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10.1103/PhysRevB.75.054415

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abstract = "Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.",

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T1 - Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

AU - Adell, M.

AU - Adell, J.

AU - Ilver, L.

AU - Kanski, J.

AU - Sadowski, J.

AU - Domagala, J. Z.

PY - 2007/2/22

Y1 - 2007/2/22

N2 - Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.

AB - Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.

UR - http://www.scopus.com/inward/record.url?scp=33847198252&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.75.054415

DO - 10.1103/PhysRevB.75.054415

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JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 5

M1 - 054415

ER -

Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

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