MnAs overlayer on GaN(000(1)under-bar)-(1 x 1) its growth, morphology and electronic structure

BJ Kowalski, IA Kowalik, RJ Iwanowski, E Lusakowska, M Sawicki, Janusz Sadowski, I Grzegory, S Porowski

Research output: Contribution to journalArticlepeer-review

Abstract

MnAs layer has been grown by means of MBE on the GaN(000 (1) under bar)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.
Original languageEnglish
Pages (from-to)645-650
JournalActa Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
Volume105
Issue number6
Publication statusPublished - 2004

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences

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