Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

A. A. Koryakin; E. D. Leshchenko; V. G. Dubrovskii

doi:10.1088/1742-6596/1410/1/012058

Modeling the formation of InP/Ga_xIn_1-xP axial nanowire heterostructures

A. A. Koryakin, E. D. Leshchenko, V. G. Dubrovskii

Research output: Contribution to journal › Article › peer-review

Abstract

A model is developed to depict the formation of InP/Ga_xIn₁-_xP axial heterostructures in self-catalyzed Ga_xIn₁-_xP nanowires. The composition profiles of the InP/Ga_xIn₁-_xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/Ga_xIn₁-_xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with Ga_xIn₁-_xAs system is performed and reveals that the InP/Ga_xIn₁-_xP axial heterojunction width is approximately two times smaller than the InAs/Ga_xIn₁-_xAs axial heterojunction width.

Original language	English
Article number	012058
Journal	Journal of Physics: Conference Series
Volume	1410
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1410/1/012058
Publication status	Published - 2019
Event	6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation Duration: 2019 Apr 22 → 2019 Apr 25

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)

Access to Document

10.1088/1742-6596/1410/1/012058

Cite this

@article{d797236ddb4a4c379d381bcc01fcd7a6,

title = "Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures",

abstract = "A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.",

author = "Koryakin, \{A. A.\} and Leshchenko, \{E. D.\} and Dubrovskii, \{V. G.\}",

year = "2019",

doi = "10.1088/1742-6596/1410/1/012058",

language = "English",

volume = "1410",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing",

number = "1",

note = "6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 ; Conference date: 22-04-2019 Through 25-04-2019",

}

TY - JOUR

T1 - Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

AU - Koryakin, A. A.

AU - Leshchenko, E. D.

AU - Dubrovskii, V. G.

PY - 2019

Y1 - 2019

N2 - A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.

AB - A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.

UR - https://www.scopus.com/pages/publications/85078098420

U2 - 10.1088/1742-6596/1410/1/012058

DO - 10.1088/1742-6596/1410/1/012058

M3 - Article

AN - SCOPUS:85078098420

SN - 1742-6588

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012058

T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Y2 - 22 April 2019 through 25 April 2019

ER -

Modeling the formation of InP/Ga_xIn_1-xP axial nanowire heterostructures

Abstract

Subject classification (UKÄ)

Access to Document

Other files and links

Fingerprint

Cite this