Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Jelena Vukajlovic-Plestina; Vladimir G Dubrovskii; Gözde Tütüncuoǧlu; Heidi Potts; Ruben Ricca; Frank Meyer; Federico Matteini; Jean-Baptiste Leran; Anna Fontcuberta I Morral

doi:10.1088/0957-4484/27/45/455601

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Jelena Vukajlovic-Plestina, Vladimir G Dubrovskii, Gözde Tütüncuoǧlu, Heidi Potts, Ruben Ricca, Frank Meyer, Federico Matteini, Jean-Baptiste Leran, Anna Fontcuberta I Morral

Swiss Federal Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.

Original language	English
Pages (from-to)	455601
Journal	Nanotechnology
Volume	27
Issue number	45
DOIs	https://doi.org/10.1088/0957-4484/27/45/455601
Publication status	Published - 2016 Nov 11
Externally published	Yes

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title = "Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si",

abstract = "Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.",

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doi = "10.1088/0957-4484/27/45/455601",

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T1 - Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates

T2 - challenges and prospects for integration of III-Vs on Si

AU - Vukajlovic-Plestina, Jelena

AU - Dubrovskii, Vladimir G

AU - Tütüncuoǧlu, Gözde

AU - Potts, Heidi

AU - Ricca, Ruben

AU - Meyer, Frank

AU - Matteini, Federico

AU - Leran, Jean-Baptiste

AU - I Morral, Anna Fontcuberta

PY - 2016/11/11

Y1 - 2016/11/11

N2 - Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.

AB - Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.

U2 - 10.1088/0957-4484/27/45/455601

DO - 10.1088/0957-4484/27/45/455601

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JO - Nanotechnology

JF - Nanotechnology

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ER -

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Abstract

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