Multiply charged ions induced by multiphoton absorption processes in rare-gas atoms at 1.064μm

A. L'Huillier, L. A. Lompre, G. Mainfray, C. Manus

Research output: Contribution to journalArticlepeer-review

Abstract

Multiply charged ions are easily formed in rare gases by multiphoton absorption processes. For Kr and Xe up to quadruply charged ions are formed. They are induced by a bandwidth-limited 50 ps laser pulse at 1.064 W cm -2 intensity range. Doubly charged ions are formed through the absorption of a very large number of photons (29 for Xe) in a direct transition from the ground state of the atom to the second ionisation limit. The percentage of Xe2+ ions relative to Xe+ ions is 1% at 10 13 W cm-2, and reaches 20% at 1014 W cm -2. At 1.06 mu m, the removal of two electrons from the ground state of rare-gas atoms in a single step is responsible for the creation of doubly charged ions. This could be a general rule for atoms which have two or more electrons in the outer shell.

Original languageEnglish
Article number012
Pages (from-to)1363-1381
Number of pages19
JournalJournal of Physics B: Atomic and Molecular Physics
Volume16
Issue number8
DOIs
Publication statusPublished - 1983 Dec 1
Externally publishedYes

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