Nano-Schottky Contacts Realized by Bottom-up Technique

Dmitry Suyatin; Johanna Trägårdh; Maria Messing; Jakob Wagner; Lars Montelius; H. Pettersson; Lars Samuelson

Nano-Schottky Contacts Realized by Bottom-up Technique

Dmitry Suyatin, Johanna Trägårdh, Maria Messing, Jakob Wagner, Lars Montelius, H. Pettersson, Lars Samuelson

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.

Original language	English
Title of host publication	INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	252-253
Publication status	Published - 2010
Event	3rd IEEE International Nanoelectronics Conference - Hong Kong, China Duration: 2010 Jan 3 → 2010 Jan 8

Conference

Conference	3rd IEEE International Nanoelectronics Conference
Country/Territory	China
City	Hong Kong
Period	2010/01/03 → 2010/01/08

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

Subject classification (UKÄ)

Condensed Matter Physics

Cite this

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title = "Nano-Schottky Contacts Realized by Bottom-up Technique",

abstract = "Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.",

author = "Dmitry Suyatin and Johanna Tr{\"a}g{\aa}rdh and Maria Messing and Jakob Wagner and Lars Montelius and H. Pettersson and Lars Samuelson",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041); 3rd IEEE International Nanoelectronics Conference ; Conference date: 03-01-2010 Through 08-01-2010",

year = "2010",

language = "English",

pages = "252--253",

booktitle = "INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Suyatin, D, Trägårdh, J, Messing, M, Wagner, J, Montelius, L, Pettersson, H & Samuelson, L 2010, Nano-Schottky Contacts Realized by Bottom-up Technique. in INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2. IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 252-253, 3rd IEEE International Nanoelectronics Conference, Hong Kong, China, 2010/01/03.

Nano-Schottky Contacts Realized by Bottom-up Technique. / Suyatin, Dmitry; Trägårdh, Johanna; Messing, Maria et al.
INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2. IEEE - Institute of Electrical and Electronics Engineers Inc., 2010. p. 252-253.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Nano-Schottky Contacts Realized by Bottom-up Technique

AU - Suyatin, Dmitry

AU - Trägårdh, Johanna

AU - Messing, Maria

AU - Wagner, Jakob

AU - Montelius, Lars

AU - Pettersson, H.

AU - Samuelson, Lars

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2010

Y1 - 2010

N2 - Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.

AB - Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.

M3 - Paper in conference proceeding

SP - 252

EP - 253

BT - INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd IEEE International Nanoelectronics Conference

Y2 - 3 January 2010 through 8 January 2010

ER -

Nano-Schottky Contacts Realized by Bottom-up Technique

Abstract

Conference

Bibliographical note

Subject classification (UKÄ)

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Cite this