Nanowire single-electron memory

Claes Thelander; Henrik Nilsson; Linus E Jensen; Lars Samuelson

doi:10.1021/nl050006s

Nanowire single-electron memory

Claes Thelander, Henrik Nilsson, Linus E Jensen, Lars Samuelson

Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.

Original language	English
Pages (from-to)	635-638
Journal	Nano Letters
Volume	5
Issue number	4
DOIs	https://doi.org/10.1021/nl050006s
Publication status	Published - 2005

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Nano Technology

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10.1021/nl050006s

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@article{6665004c8b814552b9ddb7d4ccca400a,

title = "Nanowire single-electron memory",

abstract = "We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.",

author = "Claes Thelander and Henrik Nilsson and Jensen, {Linus E} and Lars Samuelson",

year = "2005",

doi = "10.1021/nl050006s",

language = "English",

volume = "5",

pages = "635--638",

journal = "Nano Letters",

issn = "1530-6992",

publisher = "The American Chemical Society (ACS)",

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AU - Thelander, Claes

AU - Nilsson, Henrik

AU - Jensen, Linus E

AU - Samuelson, Lars

PY - 2005

Y1 - 2005

N2 - We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.

AB - We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.

U2 - 10.1021/nl050006s

DO - 10.1021/nl050006s

M3 - Article

C2 - 15826100

SN - 1530-6992

VL - 5

SP - 635

EP - 638

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Nanowire single-electron memory

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