New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Ivan Maximov, Marc Beck, Patrick Carlberg, Lars Montelius, K. Pfeiffer, F. Reuther, G. Gruetzer, H. Schulz, M. Wissen, H.-C. Scheer

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm<sup>2</sup>. Studies of the resist properties as a function of chemical composition and development conditions are also presented
Original languageEnglish
Title of host publication7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
PublisherLund University
Number of pages2
Publication statusPublished - 2002
EventProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden
Duration: 2002 Jun 242002 Jun 28

Conference

ConferenceProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/TerritorySweden
CityMalmö
Period2002/06/242002/06/28

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • nanoimprint lithography
  • high resolution negative resist mr-L 6000.1 XP
  • electron beam lithography
  • imprintable polymer
  • electron beam resolution
  • 50 nm
  • sensitivity
  • chemical composition
  • electron beam exposure

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