New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Ivan Maximov; Marc Beck; Patrick Carlberg; Lars Montelius; K. Pfeiffer; F. Reuther; G. Gruetzer; H. Schulz; M. Wissen; H.-C. Scheer

New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Ivan Maximov, Marc Beck, Patrick Carlberg, Lars Montelius, K. Pfeiffer, F. Reuther, G. Gruetzer, H. Schulz, M. Wissen, H.-C. Scheer

Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm<sup>2</sup>. Studies of the resist properties as a function of chemical composition and development conditions are also presented

Original language	English
Title of host publication	7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Publisher	Lund University
Number of pages	2
Publication status	Published - 2002
Event	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28

Conference

Conference	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/Territory	Sweden
City	Malmö
Period	2002/06/24 → 2002/06/28

Subject classification (UKÄ)

Condensed Matter Physics

Free keywords

nanoimprint lithography
high resolution negative resist mr-L 6000.1 XP
electron beam lithography
imprintable polymer
electron beam resolution
50 nm
sensitivity
chemical composition
electron beam exposure

Cite this

Maximov, I., Beck, M., Carlberg, P., Montelius, L., Pfeiffer, K., Reuther, F., Gruetzer, G., Schulz, H., Wissen, M., & Scheer, H.-C. (2002). New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography. In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science Lund University.

@inproceedings{0f7d7776e4ea4a7399bfa8a08947abae,

title = "New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography",

abstract = "We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm2. Studies of the resist properties as a function of chemical composition and development conditions are also presented",

keywords = "nanoimprint lithography, high resolution negative resist mr-L 6000.1 XP, electron beam lithography, imprintable polymer, electron beam resolution, 50 nm, sensitivity, chemical composition, electron beam exposure",

author = "Ivan Maximov and Marc Beck and Patrick Carlberg and Lars Montelius and K. Pfeiffer and F. Reuther and G. Gruetzer and H. Schulz and M. Wissen and H.-C. Scheer",

year = "2002",

language = "English",

booktitle = "7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science",

publisher = "Lund University",

note = "Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) ; Conference date: 24-06-2002 Through 28-06-2002",

}

Maximov, I, Beck, M, Carlberg, P, Montelius, L, Pfeiffer, K, Reuther, F, Gruetzer, G, Schulz, H, Wissen, M & Scheer, H-C 2002, New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography. in 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 2002/06/24.

New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography. / Maximov, Ivan; Beck, Marc; Carlberg, Patrick et al.
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, 2002.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

AU - Maximov, Ivan

AU - Beck, Marc

AU - Carlberg, Patrick

AU - Montelius, Lars

AU - Pfeiffer, K.

AU - Reuther, F.

AU - Gruetzer, G.

AU - Schulz, H.

AU - Wissen, M.

AU - Scheer, H.-C.

PY - 2002

Y1 - 2002

N2 - We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm2. Studies of the resist properties as a function of chemical composition and development conditions are also presented

AB - We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm2. Studies of the resist properties as a function of chemical composition and development conditions are also presented

KW - nanoimprint lithography

KW - high resolution negative resist mr-L 6000.1 XP

KW - electron beam lithography

KW - imprintable polymer

KW - electron beam resolution

KW - 50 nm

KW - sensitivity

KW - chemical composition

KW - electron beam exposure

M3 - Paper in conference proceeding

BT - 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

PB - Lund University

T2 - Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Y2 - 24 June 2002 through 28 June 2002

ER -

New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Abstract

Conference

Subject classification (UKÄ)

Free keywords

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Cite this