Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

D. Usachov; O. Vilkov; A. Grueneis; D. Haberer; A. Fedorov; V. K. Adamchuk; Alexei Preobrajenski; P. Dudin; A. Barinov; M. Oehzelt; C. Laubschat; D. V. Vyalikh

doi:10.1021/nl2031037

Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

D. Usachov, O. Vilkov, A. Grueneis, D. Haberer, A. Fedorov, V. K. Adamchuk, Alexei Preobrajenski, P. Dudin, A. Barinov, M. Oehzelt, C. Laubschat, D. V. Vyalikh

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

Original language	English
Pages (from-to)	5401-5407
Journal	Nano Letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1021/nl2031037
Publication status	Published - 2011

Subject classification (UKÄ)

Nano-technology

Free keywords

Graphene
nitrogen doping
electronic structure
synthesis
triazine
ARPES

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10.1021/nl2031037

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title = "Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties",

abstract = "A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.",

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author = "D. Usachov and O. Vilkov and A. Grueneis and D. Haberer and A. Fedorov and Adamchuk, {V. K.} and Alexei Preobrajenski and P. Dudin and A. Barinov and M. Oehzelt and C. Laubschat and Vyalikh, {D. V.}",

year = "2011",

doi = "10.1021/nl2031037",

language = "English",

volume = "11",

pages = "5401--5407",

journal = "Nano Letters",

issn = "1530-6992",

publisher = "The American Chemical Society (ACS)",

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TY - JOUR

T1 - Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

AU - Usachov, D.

AU - Vilkov, O.

AU - Grueneis, A.

AU - Haberer, D.

AU - Fedorov, A.

AU - Adamchuk, V. K.

AU - Preobrajenski, Alexei

AU - Dudin, P.

AU - Barinov, A.

AU - Oehzelt, M.

AU - Laubschat, C.

AU - Vyalikh, D. V.

PY - 2011

Y1 - 2011

N2 - A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

AB - A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

KW - Graphene

KW - nitrogen doping

KW - electronic structure

KW - synthesis

KW - triazine

KW - ARPES

U2 - 10.1021/nl2031037

DO - 10.1021/nl2031037

M3 - Article

C2 - 22077830

SN - 1530-6992

VL - 11

SP - 5401

EP - 5407

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

Abstract

Subject classification (UKÄ)

Free keywords

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