TY - JOUR
T1 - Nonstoichiometric Low-Temperature Grown GaAs Nanowires
AU - Díaz Álvarez, Adrian
AU - Xu, Tao
AU - Tütüncüoglu, Gözde
AU - Demonchaux, Thomas
AU - Nys, Jean-Philippe
AU - Berthe, Maxime
AU - Matteini, Federico
AU - Potts, Heidi A
AU - Troadec, David
AU - Patriarche, Gilles
AU - Lampin, Jean-François
AU - Coinon, Christophe
AU - Fontcuberta i Morral, Anna
AU - Dunin-Borkowski, Rafal E
AU - Ebert, Philipp
AU - Grandidier, Bruno
PY - 2015/10/14
Y1 - 2015/10/14
N2 - The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
AB - The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
U2 - 10.1021/acs.nanolett.5b01802
DO - 10.1021/acs.nanolett.5b01802
M3 - Article
C2 - 26339987
SN - 1530-6992
VL - 15
SP - 6440
EP - 6445
JO - Nano Letters
JF - Nano Letters
IS - 10
ER -