Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Adrian Díaz Álvarez, Tao Xu, Gözde Tütüncüoglu, Thomas Demonchaux, Jean-Philippe Nys, Maxime Berthe, Federico Matteini, Heidi A Potts, David Troadec, Gilles Patriarche, Jean-François Lampin, Christophe Coinon, Anna Fontcuberta i Morral, Rafal E Dunin-Borkowski, Philipp Ebert, Bruno Grandidier

Research output: Contribution to journalArticlepeer-review

Abstract

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.

Original languageEnglish
Pages (from-to)6440-5
Number of pages6
JournalNano Letters
Volume15
Issue number10
DOIs
Publication statusPublished - 2015 Oct 14
Externally publishedYes

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