@inproceedings{b0399e007ba44b20966ccf9c1d152b77,
title = "Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions",
abstract = "Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.",
keywords = "frequency mixer, three-terminal ballistic junctions, flip-flop memory, phase detector, RS",
author = "Jie Sun and Daniel Wallin and Patrik Brusheim and Ivan Maximov and Wang, {Z. G.} and Hongqi Xu",
year = "2007",
doi = "10.1063/1.2730463",
language = "English",
volume = "893",
publisher = "American Institute of Physics (AIP)",
pages = "1471--1472",
booktitle = "Physics of Semiconductors, Pts A and B",
address = "United States",
note = "28th International Conference on the Physics of Semiconductors (ICPS-28) ; Conference date: 24-07-2006 Through 28-07-2006",
}