Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

Moritz Knoedler; Nicolas Bologna; Heinz Schmid; Mattias Borg; Kirsten E. Moselund; Stephan Wirths; Marta D. Rossell; Heike Riel

doi:10.1021/acs.cgd.7b00983

Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

Moritz Knoedler, Nicolas Bologna, Heinz Schmid, Mattias Borg, Kirsten E. Moselund, Stephan Wirths, Marta D. Rossell, Heike Riel

Department of Electrical and Information Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO₂ templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

Original language	English
Pages (from-to)	6297-6302
Number of pages	6
Journal	Crystal Growth and Design
Volume	17
Issue number	12
DOIs	https://doi.org/10.1021/acs.cgd.7b00983
Publication status	Published - 2017 Jan 1

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Other Electrical Engineering, Electronic Engineering, Information Engineering

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abstract = "We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.",

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AU - Knoedler, Moritz

AU - Bologna, Nicolas

AU - Schmid, Heinz

AU - Borg, Mattias

AU - Moselund, Kirsten E.

AU - Wirths, Stephan

AU - Rossell, Marta D.

AU - Riel, Heike

PY - 2017/1/1

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N2 - We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

AB - We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

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Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

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