Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Neimantas Vainorius; Daniel Jacobsson; Sebastian Lehmann; Anders Gustafsson; Kimberly Dick Thelander; Lars Samuelson; Mats-Erik Pistol

doi:10.1103/PhysRevB.89.165423

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Neimantas Vainorius, Daniel Jacobsson, Sebastian Lehmann, Anders Gustafsson, Kimberly Dick Thelander, Lars Samuelson, Mats-Erik Pistol

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.

Original language	English
Article number	165423
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	89
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.89.165423
Publication status	Published - 2014

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)
Chemical Sciences

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10.1103/PhysRevB.89.165423

1 Doctoral Thesis (compilation)

Optical Studies of Polytypism in GaAs Nanowires
Vainorius, N., 2017, Solid State Physics, Lund University.
Research output: Thesis › Doctoral Thesis (compilation)

Cite this

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title = "Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires",

abstract = "We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.",

author = "Neimantas Vainorius and Daniel Jacobsson and Sebastian Lehmann and Anders Gustafsson and {Dick Thelander}, Kimberly and Lars Samuelson and Mats-Erik Pistol",

year = "2014",

doi = "10.1103/PhysRevB.89.165423",

language = "English",

volume = "89",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "1098-0121",

publisher = "American Physical Society",

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T1 - Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

AU - Vainorius, Neimantas

AU - Jacobsson, Daniel

AU - Lehmann, Sebastian

AU - Gustafsson, Anders

AU - Dick Thelander, Kimberly

AU - Samuelson, Lars

AU - Pistol, Mats-Erik

PY - 2014

Y1 - 2014

N2 - We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.

AB - We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.

U2 - 10.1103/PhysRevB.89.165423

DO - 10.1103/PhysRevB.89.165423

M3 - Article

SN - 1098-0121

VL - 89

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 16

M1 - 165423

ER -

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Abstract

Subject classification (UKÄ)

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Research output

Optical Studies of Polytypism in GaAs Nanowires

Cite this