On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT

Ulrich Betz; Maryam Olsson; Jan Marthy; Miguel Escola

doi:10.1016/j.tsf.2007.03.094

On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT

Ulrich Betz, Maryam Olsson, Jan Marthy, Miguel Escola

Balzers AG

Research output: Contribution to journal › Article › peer-review

Abstract

Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and transparencies above 90% in the visible range of light.

Original language	English
Pages (from-to)	1334-1340
Journal	Thin Solid Films
Volume	516
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2007.03.094
Publication status	Published - 2008
Externally published	Yes

Subject classification (UKÄ)

Other Engineering and Technologies
Other Social Sciences

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10.1016/j.tsf.2007.03.094

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title = "On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT",

abstract = "Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and transparencies above 90% in the visible range of light.",

author = "Ulrich Betz and Maryam Olsson and Jan Marthy and Miguel Escola",

year = "2008",

doi = "10.1016/j.tsf.2007.03.094",

language = "English",

volume = "516",

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journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT

AU - Betz, Ulrich

AU - Olsson, Maryam

AU - Marthy, Jan

AU - Escola, Miguel

PY - 2008

Y1 - 2008

N2 - Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and transparencies above 90% in the visible range of light.

AB - Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and transparencies above 90% in the visible range of light.

U2 - 10.1016/j.tsf.2007.03.094

DO - 10.1016/j.tsf.2007.03.094

M3 - Article

SN - 0040-6090

VL - 516

SP - 1334

EP - 1340

JO - Thin Solid Films

JF - Thin Solid Films

IS - 7

ER -

On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT

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