On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT

Ulrich Betz, Maryam Olsson, Jan Marthy, Miguel Escola

Research output: Contribution to journalArticlepeer-review

20 Citations (SciVal)

Abstract

Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and transparencies above 90% in the visible range of light.
Original languageEnglish
Pages (from-to)1334-1340
JournalThin Solid Films
Volume516
Issue number7
DOIs
Publication statusPublished - 2008
Externally publishedYes

Subject classification (UKÄ)

  • Other Engineering and Technologies not elsewhere specified
  • Social Sciences Interdisciplinary

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