On the thermal conductivity anisotropy in wurtzite GaN

Dat Q. Tran, Tania Paskova, Vanya Darakchieva, Plamen P. Paskov

Research output: Contribution to journalArticlepeer-review

Abstract

GaN-based power devices operating at high currents and high voltages are critically affected by the dissipation of Joule heat generated in the active regions. Consequently, knowledge of GaN thermal conductivity is crucial for effective thermal management, needed to ensure optimal device performance and reliability. Here, we present a study on the thermal conductivity of bulk GaN in crystallographic directions parallel and perpendicular to the c-axis. Thermal conductivity measurements are performed using the transient thermoreflectance technique. The experimental results are compared with a theoretical calculation based on a solution of the Boltzmann transport equation within the relaxation time approximation and taking into account the exact phonon dispersion. All factors that determine the thermal conductivity anisotropy are analyzed, and the experimentally observed small anisotropy factor is explained.

Original languageEnglish
Article number095009
JournalAIP Advances
Volume13
Issue number9
DOIs
Publication statusPublished - 2023 Sept 1

Subject classification (UKÄ)

  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'On the thermal conductivity anisotropy in wurtzite GaN'. Together they form a unique fingerprint.

Cite this