On the use of MOS varactors in RF VCOs

Pietro Andreani; Sven Mattisson

doi:10.1109/4.845194

On the use of MOS varactors in RF VCOs

Pietro Andreani, Sven Mattisson

Department of Electrical and Information Technology

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents two 1.8 GHz CMOS voltage-controlled oscillators (VCOs), tuned by an inversion-mode MOS varactor and an accumulation-mode MOS varactor, respectively. Both VCOs show a lower power consumption and a lower phase noise than a reference VCO tuned by a more commonly used diode varactor. The best overall performance is displayed by the accumulation-mode MOS varactor VCO. The VCOs were implemented in a standard 0.6 um CMOS process

Original language	English
Pages (from-to)	905-910
Journal	IEEE Journal of Solid-State Circuits
Volume	35
Issue number	6
DOIs	https://doi.org/10.1109/4.845194
Publication status	Published - 2000

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

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10.1109/4.845194

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title = "On the use of MOS varactors in RF VCOs",

abstract = "This paper presents two 1.8 GHz CMOS voltage-controlled oscillators (VCOs), tuned by an inversion-mode MOS varactor and an accumulation-mode MOS varactor, respectively. Both VCOs show a lower power consumption and a lower phase noise than a reference VCO tuned by a more commonly used diode varactor. The best overall performance is displayed by the accumulation-mode MOS varactor VCO. The VCOs were implemented in a standard 0.6 um CMOS process",

author = "Pietro Andreani and Sven Mattisson",

year = "2000",

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language = "English",

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T1 - On the use of MOS varactors in RF VCOs

AU - Andreani, Pietro

AU - Mattisson, Sven

PY - 2000

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AB - This paper presents two 1.8 GHz CMOS voltage-controlled oscillators (VCOs), tuned by an inversion-mode MOS varactor and an accumulation-mode MOS varactor, respectively. Both VCOs show a lower power consumption and a lower phase noise than a reference VCO tuned by a more commonly used diode varactor. The best overall performance is displayed by the accumulation-mode MOS varactor VCO. The VCOs were implemented in a standard 0.6 um CMOS process

U2 - 10.1109/4.845194

DO - 10.1109/4.845194

M3 - Article

SN - 0018-9200

VL - 35

SP - 905

EP - 910

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 6

ER -

On the use of MOS varactors in RF VCOs

Abstract

Subject classification (UKÄ)

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