Abstract
We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.
Original language | English |
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Pages (from-to) | 231911-3 pp |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2008 |
Subject classification (UKÄ)
- Condensed Matter Physics