Optical properties and morphology of InAs/InP (113)B surface quantum dots

A Nakkar, H Folliot, A Le Corre, F Dore, I Alghoraibi, C Labbe, G Elias, S Loualiche, Mats-Erik Pistol, Philippe Caroff, Carl Ellström

Research output: Contribution to journalArticlepeer-review

Abstract

We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.
Original languageEnglish
Pages (from-to)231911-3 pp
JournalApplied Physics Letters
Volume92
Issue number23
DOIs
Publication statusPublished - 2008

Subject classification (UKÄ)

  • Condensed Matter Physics

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