Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells

N. Rigopoulos, B. Hamilton, G. J. Davies, B. M. Towlson, N. R J Poolton, P. Dawson, D. M. Graham, M. J. Kappers, C. J. Humphreys, S. Carlson

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages1503-1504
Number of pages2
Volume893
DOIs
Publication statusPublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period2006/07/242006/07/28

Free keywords

  • EXAFS
  • InGaN
  • Quantum well

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