Abstract
We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.
Original language | English |
---|---|
Title of host publication | AIP Conference Proceedings |
Pages | 1503-1504 |
Number of pages | 2 |
Volume | 893 |
DOIs | |
Publication status | Published - 2007 |
Event | 28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 2006 Jul 24 → 2006 Jul 28 |
Conference
Conference | 28th International Conference on the Physics of Semiconductors, ICPS 2006 |
---|---|
Country/Territory | Austria |
City | Vienna |
Period | 2006/07/24 → 2006/07/28 |
Free keywords
- EXAFS
- InGaN
- Quantum well