Abstract
We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO<sub>2</sub> by Ge, using the reduced Ge dots as the seeds for epitaxy
Original language | English |
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Title of host publication | 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science |
Publisher | Lund University |
Number of pages | 2 |
Publication status | Published - 2002 |
Event | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28 |
Conference
Conference | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) |
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Country/Territory | Sweden |
City | Malmö |
Period | 2002/06/24 → 2002/06/28 |
Subject classification (UKÄ)
- Condensed Matter Physics (including Material Physics, Nano Physics)
Free keywords
- Si
- 620 degC
- Ge
- lateral epitaxial overgrowth
- Si substrate
- phase segregated Ge enrichments
- selective reduction
- high resolution transmission electron microscopy
- UHV-CVD
- dome shaped three dimensional islands
- Ge/Si islands
- reduction behaviour
- oxidation behaviour