Oxidation and reduction behaviour of Ge/Si islands

Vilma Zela; T. Sass; Anders Gustafsson; I. Pietzonka; Werner Seifert

Oxidation and reduction behaviour of Ge/Si islands

Vilma Zela, T. Sass, Anders Gustafsson, I. Pietzonka, Werner Seifert

Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H2O in N2. The reduction was done in H2, which at T<800 °C selectively reduces GeO2 only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO2 by Ge, using the reduced Ge dots as the seeds for epitaxy

Original language	English
Title of host publication	7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Publisher	Lund University
Number of pages	2
Publication status	Published - 2002
Event	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28

Conference

Conference	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/Territory	Sweden
City	Malmö
Period	2002/06/24 → 2002/06/28

Subject classification (UKÄ)

Condensed Matter Physics

Keywords

Si
620 degC
Ge
lateral epitaxial overgrowth
Si substrate
phase segregated Ge enrichments
selective reduction
high resolution transmission electron microscopy
UHV-CVD
dome shaped three dimensional islands
Ge/Si islands
reduction behaviour
oxidation behaviour

Cite this

@inproceedings{db11ba0b256941c1ab8f2cf1eac0180d,

title = "Oxidation and reduction behaviour of Ge/Si islands",

abstract = "We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H2O in N2. The reduction was done in H2, which at T<800 °C selectively reduces GeO2 only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO2 by Ge, using the reduced Ge dots as the seeds for epitaxy",

keywords = "Si, 620 degC, Ge, lateral epitaxial overgrowth, Si substrate, phase segregated Ge enrichments, selective reduction, high resolution transmission electron microscopy, UHV-CVD, dome shaped three dimensional islands, Ge/Si islands, reduction behaviour, oxidation behaviour",

author = "Vilma Zela and T. Sass and Anders Gustafsson and I. Pietzonka and Werner Seifert",

year = "2002",

language = "English",

booktitle = "7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science",

publisher = "Lund University",

note = "Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) ; Conference date: 24-06-2002 Through 28-06-2002",

}

Zela, V, Sass, T, Gustafsson, A, Pietzonka, I & Seifert, W 2002, Oxidation and reduction behaviour of Ge/Si islands. in 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 2002/06/24.

TY - GEN

T1 - Oxidation and reduction behaviour of Ge/Si islands

AU - Zela, Vilma

AU - Sass, T.

AU - Gustafsson, Anders

AU - Pietzonka, I.

AU - Seifert, Werner

PY - 2002

Y1 - 2002

N2 - We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H2O in N2. The reduction was done in H2, which at T<800 °C selectively reduces GeO2 only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO2 by Ge, using the reduced Ge dots as the seeds for epitaxy

AB - We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H2O in N2. The reduction was done in H2, which at T<800 °C selectively reduces GeO2 only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO2 by Ge, using the reduced Ge dots as the seeds for epitaxy

KW - Si

KW - 620 degC

KW - Ge

KW - lateral epitaxial overgrowth

KW - Si substrate

KW - phase segregated Ge enrichments

KW - selective reduction

KW - high resolution transmission electron microscopy

KW - UHV-CVD

KW - dome shaped three dimensional islands

KW - Ge/Si islands

KW - reduction behaviour

KW - oxidation behaviour

M3 - Paper in conference proceeding

BT - 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

PB - Lund University

T2 - Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Y2 - 24 June 2002 through 28 June 2002

ER -

Oxidation and reduction behaviour of Ge/Si islands

Abstract

Conference

Subject classification (UKÄ)

Keywords

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Cite this