Oxidation and reduction behaviour of Ge/Si islands

Vilma Zela, T. Sass, Anders Gustafsson, I. Pietzonka, Werner Seifert

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingResearchpeer-review

Abstract

We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO<sub>2</sub> by Ge, using the reduced Ge dots as the seeds for epitaxy
Original languageEnglish
Title of host publication7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
PublisherLund University
Number of pages2
Publication statusPublished - 2002
EventProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden
Duration: 2002 Jun 242002 Jun 28

Conference

ConferenceProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/TerritorySweden
CityMalmö
Period2002/06/242002/06/28

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • Si
  • 620 degC
  • Ge
  • lateral epitaxial overgrowth
  • Si substrate
  • phase segregated Ge enrichments
  • selective reduction
  • high resolution transmission electron microscopy
  • UHV-CVD
  • dome shaped three dimensional islands
  • Ge/Si islands
  • reduction behaviour
  • oxidation behaviour

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