Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

M. Tuominen; J. Lang; J. Dahl; M. Kuzmin; M. Yasir; J. Makela; Jacek Osiecki; Karina Schulte; M. P. J. Punkkinen; P. Laukkanen; K. Kokko

doi:10.1063/1.4905655

Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

M. Tuominen, J. Lang, J. Dahl, M. Kuzmin, M. Yasir, J. Makela, Jacek Osiecki, Karina Schulte, M. P. J. Punkkinen, P. Laukkanen, K. Kokko

MAX IV Laboratory

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Abstract

The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.

Original language	English
Article number	011606
Journal	Applied Physics Letters
Volume	106
Issue number	1
DOIs	https://doi.org/10.1063/1.4905655
Publication status	Published - 2015

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Social Sciences Interdisciplinary
Other Engineering and Technologies not elsewhere specified

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10.1063/1.4905655

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title = "Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy",

abstract = "The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.",

author = "M. Tuominen and J. Lang and J. Dahl and M. Kuzmin and M. Yasir and J. Makela and Jacek Osiecki and Karina Schulte and Punkkinen, {M. P. J.} and P. Laukkanen and K. Kokko",

year = "2015",

doi = "10.1063/1.4905655",

language = "English",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "1",

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TY - JOUR

T1 - Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

AU - Tuominen, M.

AU - Lang, J.

AU - Dahl, J.

AU - Kuzmin, M.

AU - Yasir, M.

AU - Makela, J.

AU - Osiecki, Jacek

AU - Schulte, Karina

AU - Punkkinen, M. P. J.

AU - Laukkanen, P.

AU - Kokko, K.

PY - 2015

Y1 - 2015

N2 - The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.

AB - The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.

U2 - 10.1063/1.4905655

DO - 10.1063/1.4905655

M3 - Article

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011606

ER -

Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

Abstract

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