Oxygen-etching of h-BN/Ru(0001) nanomesh on the nano- and mesoscopic scale

A. Goriachko; Alexei Zakharov; H. Over

doi:10.1021/jp802359u

Oxygen-etching of h-BN/Ru(0001) nanomesh on the nano- and mesoscopic scale

A. Goriachko, Alexei Zakharov, H. Over

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

The stability of the recently discovered b-BN/Ru(0001) nanomesh is of crucial importance for potential applications as a nanotemplate. In particular, thermal stability in oxygen environment is important for nanocatalysis applications. We report here on the etching experiments of the h-BN layer by molecular oxygen exposure at elevated temperatures. This process is studied both by scanning tunneling microscopy (STM) on a microscopic scale and with in situ low energy electron microscopy (LEEM) on the mesoscopic scale. Temperature thresholds are determined for the microscopic (600 degrees C) and the mesoscopic (750 degrees C) etching processes for O-2 pressures up to 1 x 10(-6) mbar. Submonolayer amounts of An deposited on the h-BN/Ru(0001) nanomesh improve considerably the stability of the h-BN nanomesh against etching by O-2.

Original language	English
Pages (from-to)	10423-10427
Journal	Journal of Physical Chemistry C
Volume	112
Issue number	28
DOIs	https://doi.org/10.1021/jp802359u
Publication status	Published - 2008

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Physical Sciences
Natural Sciences

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10.1021/jp802359u

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abstract = "The stability of the recently discovered b-BN/Ru(0001) nanomesh is of crucial importance for potential applications as a nanotemplate. In particular, thermal stability in oxygen environment is important for nanocatalysis applications. We report here on the etching experiments of the h-BN layer by molecular oxygen exposure at elevated temperatures. This process is studied both by scanning tunneling microscopy (STM) on a microscopic scale and with in situ low energy electron microscopy (LEEM) on the mesoscopic scale. Temperature thresholds are determined for the microscopic (600 degrees C) and the mesoscopic (750 degrees C) etching processes for O-2 pressures up to 1 x 10(-6) mbar. Submonolayer amounts of An deposited on the h-BN/Ru(0001) nanomesh improve considerably the stability of the h-BN nanomesh against etching by O-2.",

author = "A. Goriachko and Alexei Zakharov and H. Over",

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AU - Over, H.

PY - 2008

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N2 - The stability of the recently discovered b-BN/Ru(0001) nanomesh is of crucial importance for potential applications as a nanotemplate. In particular, thermal stability in oxygen environment is important for nanocatalysis applications. We report here on the etching experiments of the h-BN layer by molecular oxygen exposure at elevated temperatures. This process is studied both by scanning tunneling microscopy (STM) on a microscopic scale and with in situ low energy electron microscopy (LEEM) on the mesoscopic scale. Temperature thresholds are determined for the microscopic (600 degrees C) and the mesoscopic (750 degrees C) etching processes for O-2 pressures up to 1 x 10(-6) mbar. Submonolayer amounts of An deposited on the h-BN/Ru(0001) nanomesh improve considerably the stability of the h-BN nanomesh against etching by O-2.

AB - The stability of the recently discovered b-BN/Ru(0001) nanomesh is of crucial importance for potential applications as a nanotemplate. In particular, thermal stability in oxygen environment is important for nanocatalysis applications. We report here on the etching experiments of the h-BN layer by molecular oxygen exposure at elevated temperatures. This process is studied both by scanning tunneling microscopy (STM) on a microscopic scale and with in situ low energy electron microscopy (LEEM) on the mesoscopic scale. Temperature thresholds are determined for the microscopic (600 degrees C) and the mesoscopic (750 degrees C) etching processes for O-2 pressures up to 1 x 10(-6) mbar. Submonolayer amounts of An deposited on the h-BN/Ru(0001) nanomesh improve considerably the stability of the h-BN nanomesh against etching by O-2.

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JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 28

ER -

Oxygen-etching of h-BN/Ru(0001) nanomesh on the nano- and mesoscopic scale

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