Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

Nils Lamers; Zhaojun Zhang; Jesper Wallentin

doi:10.1021/acsanm.2c00188

Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

Nils Lamers, Zhaojun Zhang, Jesper Wallentin

Research output: Contribution to journal › Article › peer-review

Abstract

Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr3 nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr3 nanowires, which show a strong photoresponsivity of 0.29 A W-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.

Original language	English
Pages (from-to)	3177-3182
Number of pages	6
Journal	ACS Applied Nano Materials
Volume	5
Issue number	3
DOIs	https://doi.org/10.1021/acsanm.2c00188
Publication status	Published - 2022 Mar 25

Subject classification (UKÄ)

Condensed Matter Physics

Free keywords

CsPbBr
electron-beam lithography
nanowire
patterning
perovskite

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10.1021/acsanm.2c00188Licence: CC BY

Cite this

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title = "Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices",

abstract = "Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr3 nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr3 nanowires, which show a strong photoresponsivity of 0.29 A W-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.",

keywords = "CsPbBr, electron-beam lithography, nanowire, patterning, perovskite",

author = "Nils Lamers and Zhaojun Zhang and Jesper Wallentin",

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year = "2022",

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doi = "10.1021/acsanm.2c00188",

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T1 - Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

AU - Lamers, Nils

AU - Zhang, Zhaojun

AU - Wallentin, Jesper

PY - 2022/3/25

Y1 - 2022/3/25

N2 - Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr3 nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr3 nanowires, which show a strong photoresponsivity of 0.29 A W-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.

AB - Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr3 nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr3 nanowires, which show a strong photoresponsivity of 0.29 A W-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.

KW - CsPbBr

KW - electron-beam lithography

KW - nanowire

KW - patterning

KW - perovskite

U2 - 10.1021/acsanm.2c00188

DO - 10.1021/acsanm.2c00188

M3 - Article

C2 - 35372798

AN - SCOPUS:85125646996

SN - 2574-0970

VL - 5

SP - 3177

EP - 3182

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 3

ER -

Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

Abstract

Subject classification (UKÄ)

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