Phase Segregation in AlInP Shells on GaAs Nanowires

Niklas Sköld, Jakob Wagner, Gunnel Karlsson, Tania Hernan, Werner Seifert, Mats-Erik Pistol, Lars Samuelson

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied morphology and phase segregation of AlInP shells on GaAs nanowires. Photoluminescence measurements on single core-
shell nanowires indicated variations in the shell composition, and phase segregation was confirmed by cross-sectional scanning transmission
electron microscopy on 30 nm thin slices of the wires. It was discovered that Al-rich domains form in the á112ñ directions where two {110}
shell facets meet during growth. We propose that the mechanism behind this phase segregation is a variation in the chemical potential along
the circumference of the nanowire together with a difference in diffusion lengths for the different growth species. From the morphology of the
core and the shell, we conclude that the side facet growth is temperature dependent forming {112} facets at low growth temperature and
{110} facets at high growth temperature
Original languageEnglish
Pages (from-to)2743-2747
JournalNano Letters
Volume6
Issue number12
DOIs
Publication statusPublished - 2006

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

Subject classification (UKÄ)

  • Nano-technology
  • Condensed Matter Physics (including Material Physics, Nano Physics)

Fingerprint

Dive into the research topics of 'Phase Segregation in AlInP Shells on GaAs Nanowires'. Together they form a unique fingerprint.

Cite this