Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As

M. Adell, J. Adell, L. Ilver, J. Kanski, J. Sadowski

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3 Citations (SciVal)

Abstract

Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.

Original languageEnglish
Article number172509
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
Publication statusPublished - 2006

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