Photon upconversion in degenerately sulfur doped InP nanowires.

Kilian Mergenthaler; Sebastian Lehmann; J Wallentin; Wei Zhang; Magnus Borgström; Arkady Yartsev; Mats-Erik Pistol

doi:10.1039/c5nr05472a

Photon upconversion in degenerately sulfur doped InP nanowires.

Kilian Mergenthaler, Sebastian Lehmann, J Wallentin, Wei Zhang, Magnus Borgström, Arkady Yartsev, Mats-Erik Pistol

University of Göttingen

Research output: Contribution to journal › Article › peer-review

Abstract

Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to high |k|-values, and the temperature dependence of this process is measured. We show that hole relaxation via phonon scattering can be observed in continuous wave excitation luminescence measurements.

Original language	English
Pages (from-to)	20503-20509
Journal	Nanoscale
Volume	7
Issue number	48
DOIs	https://doi.org/10.1039/c5nr05472a
Publication status	Published - 2015

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Chemical Physics (S) (011001060), Solid State Physics (011013006)

Subject classification (UKÄ)

Atom and Molecular Physics and Optics

Access to Document

10.1039/c5nr05472a

1 Doctoral Thesis (compilation)

Photon Upconversion in Heavily Doped Semiconductors
Mergenthaler, K., 2016, 92 p.
Research output: Thesis › Doctoral Thesis (compilation)

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title = "Photon upconversion in degenerately sulfur doped InP nanowires.",

abstract = "Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to high |k|-values, and the temperature dependence of this process is measured. We show that hole relaxation via phonon scattering can be observed in continuous wave excitation luminescence measurements.",

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language = "English",

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T1 - Photon upconversion in degenerately sulfur doped InP nanowires.

AU - Mergenthaler, Kilian

AU - Lehmann, Sebastian

AU - Wallentin, J

AU - Zhang, Wei

AU - Borgström, Magnus

AU - Yartsev, Arkady

AU - Pistol, Mats-Erik

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060), Solid State Physics (011013006)

PY - 2015

Y1 - 2015

N2 - Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to high |k|-values, and the temperature dependence of this process is measured. We show that hole relaxation via phonon scattering can be observed in continuous wave excitation luminescence measurements.

AB - Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to high |k|-values, and the temperature dependence of this process is measured. We show that hole relaxation via phonon scattering can be observed in continuous wave excitation luminescence measurements.

U2 - 10.1039/c5nr05472a

DO - 10.1039/c5nr05472a

M3 - Article

C2 - 26585229

SN - 2040-3372

VL - 7

SP - 20503

EP - 20509

JO - Nanoscale

JF - Nanoscale

IS - 48

ER -

Photon upconversion in degenerately sulfur doped InP nanowires.

Abstract

Bibliographical note

Subject classification (UKÄ)

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Research output

Photon Upconversion in Heavily Doped Semiconductors

Cite this