Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

Andrii I. Mostovyi, Mykhailo M. Solovan, Viktor V. Brus, Tõnu Pullerits, Pavlo D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωfirst>cm, ρ2=10 Ωfirst>cm, ρ3=40 Ωfirst>cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

Original languageEnglish
Title of host publicationThirteenth International Conference on Correlation Optics
PublisherSPIE
Volume10612
ISBN (Electronic)9781510617278
DOIs
Publication statusPublished - 2018 Jan 1
Event13th International Conference on Correlation Optics - Chernivtsi, Ukraine
Duration: 2017 Sept 112017 Sept 15

Conference

Conference13th International Conference on Correlation Optics
Country/TerritoryUkraine
CityChernivtsi
Period2017/09/112017/09/15

Subject classification (UKÄ)

  • Physical Chemistry (including Surface- and Colloid Chemistry)
  • Condensed Matter Physics (including Material Physics, Nano Physics)

Free keywords

  • CdTe
  • Current transport mechanisms
  • Heterojunction
  • MoO
  • Ohmic contacts
  • Physical properties

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