Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

Hengfang Zhang; Ingemar Persson; Tai Chen Jr.; Alexis Papamichail; Dat Q. Tran; Per O. Å. Persson; Plamen P. Paskov; Vanya Darakchieva

doi:10.1021/acs.cgd.2c01199

Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

Hengfang Zhang, Ingemar Persson, Tai Chen Jr., Alexis Papamichail, Dat Q. Tran, Per O. Å. Persson, Plamen P. Paskov, Vanya Darakchieva

Research output: Contribution to journal › Article › peer-review

Abstract

Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is difficult to achieve as a result of unintentional polarity inversion domains (IDs). Herein, we present a comprehensive structural investigation with both atomic detail and thermodynamic analysis of the polarity evolution in low- and high-temperature AlN layers on on-axis and 4° off-axis carbon-face 4H-SiC (0001̅) grown by hot-wall metal organic chemical vapor deposition. A polarity control strategy has been developed by variation of thermodynamic Al supersaturation and substrate misorientation angle in order to achieve the desired growth mode and polarity. We demonstrate that IDs are completely suppressed for high-temperature AlN nucleation layers when a step-flow growth mode is achieved on the off-axis substrates. We employ this approach to demonstrate high quality N-polar epitaxial AlGaN/GaN/AlN heterostructures.

Original language	English
Pages (from-to)	1049 –1056
Number of pages	8
Journal	Crystal Growth and Design
Volume	23
Issue number	2
DOIs	https://doi.org/10.1021/acs.cgd.2c01199
Publication status	Published - 2023 Jan

Subject classification (UKÄ)

Materials Engineering

Free keywords

N-polar GaN
polarity
TEM
MOCVD

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10.1021/acs.cgd.2c01199Licence: CC BY

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@article{36fcc43627b949e184b4de6347561b70,

title = "Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures",

abstract = "Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is difficult to achieve as a result of unintentional polarity inversion domains (IDs). Herein, we present a comprehensive structural investigation with both atomic detail and thermodynamic analysis of the polarity evolution in low- and high-temperature AlN layers on on-axis and 4° off-axis carbon-face 4H-SiC (0001̅) grown by hot-wall metal organic chemical vapor deposition. A polarity control strategy has been developed by variation of thermodynamic Al supersaturation and substrate misorientation angle in order to achieve the desired growth mode and polarity. We demonstrate that IDs are completely suppressed for high-temperature AlN nucleation layers when a step-flow growth mode is achieved on the off-axis substrates. We employ this approach to demonstrate high quality N-polar epitaxial AlGaN/GaN/AlN heterostructures.",

keywords = "N-polar GaN, polarity, TEM, MOCVD",

author = "Hengfang Zhang and Ingemar Persson and {Chen Jr.}, Tai and Alexis Papamichail and Tran, {Dat Q.} and Persson, {Per O. {\AA}.} and Paskov, {Plamen P.} and Vanya Darakchieva",

year = "2023",

month = jan,

doi = "10.1021/acs.cgd.2c01199",

language = "English",

volume = "23",

pages = "1049 –1056",

journal = "Crystal Growth and Design",

issn = "1528-7483",

publisher = "The American Chemical Society (ACS)",

number = "2",

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TY - JOUR

T1 - Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

AU - Zhang, Hengfang

AU - Persson, Ingemar

AU - Chen Jr., Tai

AU - Papamichail, Alexis

AU - Tran, Dat Q.

AU - Persson, Per O. Å.

AU - Paskov, Plamen P.

AU - Darakchieva, Vanya

PY - 2023/1

Y1 - 2023/1

N2 - Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is difficult to achieve as a result of unintentional polarity inversion domains (IDs). Herein, we present a comprehensive structural investigation with both atomic detail and thermodynamic analysis of the polarity evolution in low- and high-temperature AlN layers on on-axis and 4° off-axis carbon-face 4H-SiC (0001̅) grown by hot-wall metal organic chemical vapor deposition. A polarity control strategy has been developed by variation of thermodynamic Al supersaturation and substrate misorientation angle in order to achieve the desired growth mode and polarity. We demonstrate that IDs are completely suppressed for high-temperature AlN nucleation layers when a step-flow growth mode is achieved on the off-axis substrates. We employ this approach to demonstrate high quality N-polar epitaxial AlGaN/GaN/AlN heterostructures.

AB - Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is difficult to achieve as a result of unintentional polarity inversion domains (IDs). Herein, we present a comprehensive structural investigation with both atomic detail and thermodynamic analysis of the polarity evolution in low- and high-temperature AlN layers on on-axis and 4° off-axis carbon-face 4H-SiC (0001̅) grown by hot-wall metal organic chemical vapor deposition. A polarity control strategy has been developed by variation of thermodynamic Al supersaturation and substrate misorientation angle in order to achieve the desired growth mode and polarity. We demonstrate that IDs are completely suppressed for high-temperature AlN nucleation layers when a step-flow growth mode is achieved on the off-axis substrates. We employ this approach to demonstrate high quality N-polar epitaxial AlGaN/GaN/AlN heterostructures.

KW - N-polar GaN

KW - polarity

KW - TEM

KW - MOCVD

U2 - 10.1021/acs.cgd.2c01199

DO - 10.1021/acs.cgd.2c01199

M3 - Article

SN - 1528-7483

VL - 23

SP - 1049

EP - 1056

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 2

ER -

Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

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Subject classification (UKÄ)

Free keywords

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