Abstract
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 111 or the equivalent wurtzite0001 direction. This growth direction(s) is what is typically observed in most III-V and II-VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.
Original language | English |
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Article number | 105607 |
Journal | Nanotechnology |
Volume | 33 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2022 Mar 5 |
Subject classification (UKÄ)
- Condensed Matter Physics
Keywords
- catalyst-nanowire interface energy
- growth direction
- in situ TEM
- lattice resolved
- nucleation