Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.

Jesper Wallentin; Kilian Mergenthaler; Martin Ek; Reine Wallenberg; Lars Samuelson; Knut Deppert; Mats-Erik Pistol; Magnus Borgström

doi:10.1021/nl200492g

Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.

Jesper Wallentin, Kilian Mergenthaler, Martin Ek, Reine Wallenberg, Lars Samuelson, Knut Deppert, Mats-Erik Pistol, Magnus Borgström

Research output: Contribution to journal › Article › peer-review

Abstract

We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).

Original language	English
Pages (from-to)	2286-2290
Journal	Nano Letters
Volume	11
Issue number	Online May 23, 2011
DOIs	https://doi.org/10.1021/nl200492g
Publication status	Published - 2011

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

Subject classification (UKÄ)

Nano-technology
Condensed Matter Physics (including Material Physics, Nano Physics)

Access to Document

10.1021/nl200492g

2 Doctoral Thesis (compilation)

Photon Upconversion in Heavily Doped Semiconductors
Mergenthaler, K., 2016, 92 p.
Research output: Thesis › Doctoral Thesis (compilation)

File
Doping of Semiconductor Nanowires
Wallentin, J., 2012, Lund University. 183 p.
Research output: Thesis › Doctoral Thesis (compilation)

File

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden
Wallenberg, R. (Manager)
Centre for Analysis and Synthesis
Infrastructure

Cite this

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title = "Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.",

abstract = "We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).",

author = "Jesper Wallentin and Kilian Mergenthaler and Martin Ek and Reine Wallenberg and Lars Samuelson and Knut Deppert and Mats-Erik Pistol and Magnus Borgstr{\"o}m",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)",

year = "2011",

doi = "10.1021/nl200492g",

language = "English",

volume = "11",

pages = "2286--2290",

journal = "Nano Letters",

issn = "1530-6992",

publisher = "The American Chemical Society (ACS)",

number = "Online May 23, 2011",

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TY - JOUR

T1 - Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.

AU - Wallentin, Jesper

AU - Mergenthaler, Kilian

AU - Ek, Martin

AU - Wallenberg, Reine

AU - Samuelson, Lars

AU - Deppert, Knut

AU - Pistol, Mats-Erik

AU - Borgström, Magnus

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

PY - 2011

Y1 - 2011

N2 - We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).

AB - We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).

U2 - 10.1021/nl200492g

DO - 10.1021/nl200492g

M3 - Article

C2 - 21604708

SN - 1530-6992

VL - 11

SP - 2286

EP - 2290

JO - Nano Letters

JF - Nano Letters

IS - Online May 23, 2011

ER -

Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.

Abstract

Bibliographical note

Subject classification (UKÄ)

Access to Document

Fingerprint

Research output

Photon Upconversion in Heavily Doped Semiconductors

Doping of Semiconductor Nanowires

Equipment

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden

Cite this