Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

M. Ahola-Tuomi; M. P. J. Punkkinen; P. Laukkanen; M. Kuzmin; J. Lang; Karina Schulte; Annette Pietzsch; R. E. Perala; N. Rasanen; I. J. Vayrynen

doi:10.1103/PhysRevB.83.245401

Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

M. Ahola-Tuomi, M. P. J. Punkkinen, P. Laukkanen, M. Kuzmin, J. Lang, Karina Schulte, Annette Pietzsch, R. E. Perala, N. Rasanen, I. J. Vayrynen

MAX IV Laboratory

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Abstract

We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.

Original language	English
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	83
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.83.245401
Publication status	Published - 2011

Subject classification (UKÄ)

Physical Sciences
Natural Sciences

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10.1103/PhysRevB.83.245401

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Ahola-Tuomi, M., Punkkinen, M. P. J., Laukkanen, P., Kuzmin, M., Lang, J., Schulte, K., Pietzsch, A., Perala, R. E., Rasanen, N., & Vayrynen, I. J. (2011). Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations. Physical Review B (Condensed Matter and Materials Physics), 83(24). https://doi.org/10.1103/PhysRevB.83.245401

@article{737c4602c3d84862980e0a17b66022f1,

title = "Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations",

abstract = "We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a {"}fingerprint{"} of a well-ordered Bi/InAs(100) nanoline surface.",

author = "M. Ahola-Tuomi and Punkkinen, {M. P. J.} and P. Laukkanen and M. Kuzmin and J. Lang and Karina Schulte and Annette Pietzsch and Perala, {R. E.} and N. Rasanen and Vayrynen, {I. J.}",

year = "2011",

doi = "10.1103/PhysRevB.83.245401",

language = "English",

volume = "83",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "24",

}

Ahola-Tuomi, M, Punkkinen, MPJ, Laukkanen, P, Kuzmin, M, Lang, J, Schulte, K, Pietzsch, A, Perala, RE, Rasanen, N & Vayrynen, IJ 2011, 'Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations', Physical Review B (Condensed Matter and Materials Physics), vol. 83, no. 24. https://doi.org/10.1103/PhysRevB.83.245401

TY - JOUR

T1 - Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

AU - Ahola-Tuomi, M.

AU - Punkkinen, M. P. J.

AU - Laukkanen, P.

AU - Kuzmin, M.

AU - Lang, J.

AU - Schulte, Karina

AU - Pietzsch, Annette

AU - Perala, R. E.

AU - Rasanen, N.

AU - Vayrynen, I. J.

PY - 2011

Y1 - 2011

N2 - We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.

AB - We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.

U2 - 10.1103/PhysRevB.83.245401

DO - 10.1103/PhysRevB.83.245401

M3 - Article

SN - 2469-9950

VL - 83

JO - Physical Review B

JF - Physical Review B

IS - 24

ER -

Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

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