Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

X. -J. Shang, J. -F. He, M. -F. Li, F. Zhan, H. -Q. Ni, Z. -C. Niu, Hans Pettersson, Y. Fu

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20 Citations (SciVal)

Abstract

Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]
Original languageEnglish
Article number113514
JournalApplied Physics Letters
Volume99
Issue number11
DOIs
Publication statusPublished - 2011

Subject classification (UKÄ)

  • Condensed Matter Physics

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