Abstract
Recently, nonlinear properties of three-terminal ballistic junctions (TBJs) were predicted by theoretical calculations done by Xu, and potential applications such as rectification and logic function proposed. In that analysis the TBJ was modeled by connecting three quantum point contacts via a ballistic cavity with adiabatic boundaries, thus neglecting any backscattering of electrons. In this paper we develop a realistic model based on the scattering-matrix method for the calculation of transport through TBJs with arbitrary potential profiles. Temperature-dependent linear and nonlinear transport has been calculated and analyzed for a number of Y-shaped devices with different geometries, sizes, impurity concentrations and various degrees of boundary roughness. Interference effects are shown to influence the characteristics of the calculated transport in a strong way at low temperature where new quantum phenomena are predicted
| Original language | English |
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| Title of host publication | 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science |
| Publisher | Lund University |
| Number of pages | 2 |
| Publication status | Published - 2002 |
| Event | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28 |
Conference
| Conference | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) |
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| Country/Territory | Sweden |
| City | Malmö |
| Period | 2002/06/24 → 2002/06/28 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- Y-branches
- quantum interference effects
- nonlinear properties
- quantum phenomena
- three terminal ballistic junctions
- potential applications
- rectification
- quantum point contacts
- logic function
- ballistic cavity
- adiabatic boundaries
- electron backscattering
- realistic model
- electron transport
- scattering matrix method
- temperature dependent linear transport
- Y-shaped devices
- boundary roughness
- impurity concentrations