Random telegraph noise in the photon emission from semiconductor quantum dots

Mats-Erik Pistol; Nikolay Panev; P Castrillo; Dan Hessman; Lars Samuelson; Werner Seifert; V Evtikhiev; A Katznelson; E Kotelnikov

doi:10.1109/EQEC.2005.1567191

Random telegraph noise in the photon emission from semiconductor quantum dots

Mats-Erik Pistol, Nikolay Panev, P Castrillo, Dan Hessman, Lars Samuelson, Werner Seifert, V Evtikhiev, A Katznelson, E Kotelnikov

Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible

Original language	English
Title of host publication	2005 European Quantum Electronics Conference
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	18-18
ISBN (Print)	0-7803-8973-5
DOIs	https://doi.org/10.1109/EQEC.2005.1567191
Publication status	Published - 2005
Event	2005 European Quantum Electronics Conference - Munich, Germany Duration: 2005 Jun 12 → 2005 Jun 17

Conference

Conference	2005 European Quantum Electronics Conference
Country/Territory	Germany
City	Munich
Period	2005/06/12 → 2005/06/17

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)

Free keywords

switching behaviour
nonradiative defects
InAs-GaAs-InP-GaInP
band filling
surface density
Stranski-Krastanow technique
quantum dots
photoluminescence
semiconductor quantum dots
random telegraph noise
photon emission

Access to Document

10.1109/EQEC.2005.1567191

Cite this

Pistol, M.-E., Panev, N., Castrillo, P., Hessman, D., Samuelson, L., Seifert, W., Evtikhiev, V., Katznelson, A., & Kotelnikov, E. (2005). Random telegraph noise in the photon emission from semiconductor quantum dots. In 2005 European Quantum Electronics Conference (pp. 18-18). IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EQEC.2005.1567191

@inproceedings{132a30f42d894ae6844153c6ac1ebd8c,

title = "Random telegraph noise in the photon emission from semiconductor quantum dots",

abstract = "This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible",

keywords = "switching behaviour, nonradiative defects, InAs-GaAs-InP-GaInP, band filling, surface density, Stranski-Krastanow technique, quantum dots, photoluminescence, semiconductor quantum dots, random telegraph noise, photon emission",

author = "Mats-Erik Pistol and Nikolay Panev and P Castrillo and Dan Hessman and Lars Samuelson and Werner Seifert and V Evtikhiev and A Katznelson and E Kotelnikov",

year = "2005",

doi = "10.1109/EQEC.2005.1567191",

language = "English",

isbn = "0-7803-8973-5",

pages = "18--18",

booktitle = "2005 European Quantum Electronics Conference",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2005 European Quantum Electronics Conference ; Conference date: 12-06-2005 Through 17-06-2005",

}

Pistol, M-E, Panev, N, Castrillo, P, Hessman, D , Samuelson, L, Seifert, W, Evtikhiev, V, Katznelson, A & Kotelnikov, E 2005, Random telegraph noise in the photon emission from semiconductor quantum dots. in 2005 European Quantum Electronics Conference. IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 18-18, 2005 European Quantum Electronics Conference, Munich, Germany, 2005/06/12. https://doi.org/10.1109/EQEC.2005.1567191

Random telegraph noise in the photon emission from semiconductor quantum dots. / Pistol, Mats-Erik; Panev, Nikolay; Castrillo, P et al.
2005 European Quantum Electronics Conference. IEEE - Institute of Electrical and Electronics Engineers Inc., 2005. p. 18-18.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Random telegraph noise in the photon emission from semiconductor quantum dots

AU - Pistol, Mats-Erik

AU - Panev, Nikolay

AU - Castrillo, P

AU - Hessman, Dan

AU - Samuelson, Lars

AU - Seifert, Werner

AU - Evtikhiev, V

AU - Katznelson, A

AU - Kotelnikov, E

PY - 2005

Y1 - 2005

N2 - This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible

AB - This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible

KW - switching behaviour

KW - nonradiative defects

KW - InAs-GaAs-InP-GaInP

KW - band filling

KW - surface density

KW - Stranski-Krastanow technique

KW - quantum dots

KW - photoluminescence

KW - semiconductor quantum dots

KW - random telegraph noise

KW - photon emission

U2 - 10.1109/EQEC.2005.1567191

DO - 10.1109/EQEC.2005.1567191

M3 - Paper in conference proceeding

SN - 0-7803-8973-5

SP - 18

EP - 18

BT - 2005 European Quantum Electronics Conference

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 European Quantum Electronics Conference

Y2 - 12 June 2005 through 17 June 2005

ER -

Random telegraph noise in the photon emission from semiconductor quantum dots

Abstract

Conference

Subject classification (UKÄ)

Free keywords

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