Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

Markus Hellenbrand; Elvedin Memisevic; Johannes Svensson; Erik Lind; Lars-Erik Wernersson

doi:10.1109/ESSDERC.2017.8066586

Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Erik Lind, Lars-Erik Wernersson

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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Abstract

Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.

Original language	English
Title of host publication	47th European Solid-State Device Research Conference (ESSDERC), 2017
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	38-41
Number of pages	4
ISBN (Electronic)	978-1-5090-5978-2
ISBN (Print)	978-1-5090-5979-9
DOIs	https://doi.org/10.1109/ESSDERC.2017.8066586
Publication status	Published - 2017 Sept
Event	ESSDERC 47th European Solid-State Device Research Conference - Leuven, Belgium Duration: 2017 Sept 11 → 2017 Sept 14

Other

Other	ESSDERC 47th European Solid-State Device Research Conference
Country/Territory	Belgium
City	Leuven
Period	2017/09/11 → 2017/09/14

Subject classification (UKÄ)

Nano-technology

Free keywords

Tunnel Field-Effect Transistors
Nanowires
Below 60 mV/decade
Random Telegraph Signal Noise
Elastic Tunneling

Access to Document

10.1109/ESSDERC.2017.8066586

RTS_in_TFETs_MHE_LU_uploadAccepted author manuscript, 959 KB

1 Doctoral Thesis (compilation)

Electrical Characterisation of III-V Nanowire MOSFETs
Hellenbrand, M., 2020 May, Lund: Department of Electrical and Information Technology, Lund University. 156 p.
Research output: Thesis › Doctoral Thesis (compilation)

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Hellenbrand, M., Memisevic, E., Svensson, J., Lind, E., & Wernersson, L.-E. (2017). Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade. In 47th European Solid-State Device Research Conference (ESSDERC), 2017 (pp. 38-41). IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESSDERC.2017.8066586

@inproceedings{4a3ec9e7f15c40948cefb967b142fdf0,

title = "Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade",

abstract = "Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.",

keywords = "Tunnel Field-Effect Transistors, Nanowires, Below 60 mV/decade, Random Telegraph Signal Noise, Elastic Tunneling",

author = "Markus Hellenbrand and Elvedin Memisevic and Johannes Svensson and Erik Lind and Lars-Erik Wernersson",

year = "2017",

month = sep,

doi = "10.1109/ESSDERC.2017.8066586",

language = "English",

isbn = "978-1-5090-5979-9",

pages = "38--41",

booktitle = "47th European Solid-State Device Research Conference (ESSDERC), 2017",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "ESSDERC 47th European Solid-State Device Research Conference ; Conference date: 11-09-2017 Through 14-09-2017",

}

Hellenbrand, M, Memisevic, E, Svensson, J , Lind, E & Wernersson, L-E 2017, Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade. in 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 38-41, ESSDERC 47th European Solid-State Device Research Conference, Leuven, Belgium, 2017/09/11. https://doi.org/10.1109/ESSDERC.2017.8066586

Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade. / Hellenbrand, Markus; Memisevic, Elvedin; Svensson, Johannes et al.
47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE - Institute of Electrical and Electronics Engineers Inc., 2017. p. 38-41.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

TY - GEN

T1 - Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

AU - Hellenbrand, Markus

AU - Memisevic, Elvedin

AU - Svensson, Johannes

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2017/9

Y1 - 2017/9

N2 - Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.

AB - Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements. The cause for RTS noise are electrons being captured in and released from individual defects in the gate oxide. Under the assumption that elastic tunneling is the underlying capture and emission mechanism, the measured RTS time constants vary with the relative position of the channel Fermi level and the defect energy level while the amplitudes — independent of the capture and release mechanism — follow the inverse of the inverse subthreshold slope.

KW - Tunnel Field-Effect Transistors

KW - Nanowires

KW - Below 60 mV/decade

KW - Random Telegraph Signal Noise

KW - Elastic Tunneling

U2 - 10.1109/ESSDERC.2017.8066586

DO - 10.1109/ESSDERC.2017.8066586

M3 - Paper in conference proceeding

SN - 978-1-5090-5979-9

SP - 38

EP - 41

BT - 47th European Solid-State Device Research Conference (ESSDERC), 2017

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - ESSDERC 47th European Solid-State Device Research Conference

Y2 - 11 September 2017 through 14 September 2017

ER -

Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

Abstract

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Subject classification (UKÄ)

Free keywords

Access to Document

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Research output

Electrical Characterisation of III-V Nanowire MOSFETs

Cite this