TY - JOUR
T1 - Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate
AU - Chaudhary, Shilpi
AU - Head, Ashley
AU - Sanchez-de-Armas, Rocio
AU - Tissot, Heloise
AU - Olivieri, Giorgia
AU - Bournel, Fabrice
AU - Montelius, Lars
AU - Ye, Lei
AU - Rochet, Francois
AU - Gallet, Jean-Jacques
AU - Brena, Barbara
AU - Schnadt, Joachim
PY - 2015
Y1 - 2015
N2 - The interaction of the ruffle TiO2(110) surface with tetraethyl orthosilicate (TEOS) in the pressure range from UHV to 1 mbar as well as the TEOS-based chemical vapor deposition of SiO2 on the TiO2(110) surface were monitored in real time using near-ambient pressure X-ray photoelectron spectroscopy. The experimental data and density functional theory calculations confirm the dissociative adsorption of TEOS on the surface already at room temperature. At elevated pressure, the ethoxy species formed in the adsorption process undergoes further surface reactions toward a carboxyl species not observed in the absence of a TEOS gas phase reservoir. Annealing of the adsorption layer leads to the formation of SiO2, and an intermediate oxygen species assigned to a mixed titanium/silicon oxide is identified. Atomic force microscopy confirms the morphological changes after silicon oxide formation.
AB - The interaction of the ruffle TiO2(110) surface with tetraethyl orthosilicate (TEOS) in the pressure range from UHV to 1 mbar as well as the TEOS-based chemical vapor deposition of SiO2 on the TiO2(110) surface were monitored in real time using near-ambient pressure X-ray photoelectron spectroscopy. The experimental data and density functional theory calculations confirm the dissociative adsorption of TEOS on the surface already at room temperature. At elevated pressure, the ethoxy species formed in the adsorption process undergoes further surface reactions toward a carboxyl species not observed in the absence of a TEOS gas phase reservoir. Annealing of the adsorption layer leads to the formation of SiO2, and an intermediate oxygen species assigned to a mixed titanium/silicon oxide is identified. Atomic force microscopy confirms the morphological changes after silicon oxide formation.
U2 - 10.1021/acs.jpcc.5b04985
DO - 10.1021/acs.jpcc.5b04985
M3 - Article
SN - 1932-7447
VL - 119
SP - 19149
EP - 19161
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 33
ER -