Realization of single and double axial InSb-GaSb heterostructure nanowires

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Abstract

Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.
Original languageEnglish
Pages (from-to)269-273
JournalPhysica Status Solidi. Rapid Research Letters
Volume8
Issue number3
DOIs
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Chemical Sciences
  • Condensed Matter Physics

Keywords

  • MOVPE
  • III-V semiconductors
  • nanowires
  • antimonides
  • heterostructures

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